Name: SI3586DV-T1-E3
Brand: Vishay Siliconix
SKU: SI3586DV-T1-E3
Availability: InStock

REF: SI3586DV-T1-E3 Vishay Siliconix

SI3586DV-T1-E3

MOSFET N/P-CH 20V 2.9A 6TSOP

SI3586DV-T1-E3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET N/P-CH 20V 2.9A 6TSOP. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case SOT-23-6 Thin, TSOT-23-6, power - max 830mW.

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In Stock: 8,690

Specifications

14 parameters

Product Status	Obsolete
FET Type	N and P-Channel
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	2.9A, 2.1A
Rds On (Max) @ Id, Vgs	60mOhm @ 3.4A, 4.5V
Vgs(th) (Max) @ Id	1.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs	6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	830mW
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package	6-TSOP