Name: SI3585DV-T1-GE3
Brand: Vishay Siliconix
SKU: SI3585DV-T1-GE3
Availability: InStock

REF: SI3585DV-T1-GE3 Vishay Siliconix

SI3585DV-T1-GE3

MOSFET N/P-CH 20V 2A 6-TSOP

SI3585DV-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET N/P-CH 20V 2A 6-TSOP. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case SOT-23-6 Thin, TSOT-23-6, power - max 830mW.

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In Stock: 1,563

Specifications

14 parameters

Product Status	Obsolete
FET Type	N and P-Channel
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	2A, 1.5A
Rds On (Max) @ Id, Vgs	125mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id	600mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs	3.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	830mW
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package	6-TSOP