Name: SI3493BDV-T1-BE3
Brand: Vishay Siliconix
SKU: SI3493BDV-T1-BE3
Price: 1.01 USD
Availability: InStock

REF: SI3493BDV-T1-BE3 Vishay Siliconix

SI3493BDV-T1-BE3

Vishay Siliconix

P-CHANNEL 20-V (D-S) MOSFET

SI3493BDV-T1-BE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. P-CHANNEL 20-V (D-S) MOSFET. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case SOT-23-6 Thin, TSOT-23-6.

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In Stock: 9,000

Specifications

17 parameters

Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	7A (Ta), 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	27.5mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	43.5 nC @ 5 V

Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	1805 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	2.08W (Ta), 2.97W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-TSOP
Package / Case	SOT-23-6 Thin, TSOT-23-6