SI3483DDV-T1-BE3

In Stock: 11,460
SI3483DDV-T1-BE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single
REF: SI3483DDV-T1-BE3 Vishay Siliconix
SI3483DDV-T1-BE3

Vishay Siliconix

P-CHANNEL 30-V (D-S) MOSFET

SI3483DDV-T1-BE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. P-CHANNEL 30-V (D-S) MOSFET. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case SOT-23-6 Thin, TSOT-23-6.

In Stock: 11,460

Specifications

17 parameters
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C6.4A (Ta), 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs31.2mOhm @ 5A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs14.5 nC @ 10 V
Vgs (Max)+16V, -20V
Input Capacitance (Ciss) (Max) @ Vds580 pF @ 15 V
FET Feature-
Power Dissipation (Max)2W (Ta), 3W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-TSOP
Package / CaseSOT-23-6 Thin, TSOT-23-6

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