Name: SI3475DV-T1-E3
Brand: Vishay Siliconix
SKU: SI3475DV-T1-E3
Availability: InStock

REF: SI3475DV-T1-E3 Vishay Siliconix

SI3475DV-T1-E3

MOSFET P-CH 200V 950MA 6TSOP

SI3475DV-T1-E3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 200V 950MA 6TSOP. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case SOT-23-6 Thin, TSOT-23-6.

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In Stock: 9,330

Specifications

17 parameters

Product Status	Obsolete
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	950mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	1.61Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	18 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	500 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	2W (Ta), 3.2W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-TSOP
Package / Case	SOT-23-6 Thin, TSOT-23-6