SI3464DV-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single
REF: SI3464DV-T1-GE3 Vishay Siliconix
SI3464DV-T1-GE3

Vishay Siliconix

MOSFET N-CH 20V 8A 6TSOP

SI3464DV-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 20V 8A 6TSOP. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case SOT-23-6 Thin, TSOT-23-6.

In Stock: 5,035

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs24mOhm @ 7.5A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs18 nC @ 5 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds1065 pF @ 10 V
FET Feature-
Power Dissipation (Max)2W (Ta), 3.6W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-TSOP
Package / CaseSOT-23-6 Thin, TSOT-23-6

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