Name: SI3460DV-T1-GE3
Brand: Vishay Siliconix
SKU: SI3460DV-T1-GE3
Availability: InStock

REF: SI3460DV-T1-GE3 Vishay Siliconix

SI3460DV-T1-GE3

MOSFET N-CH 20V 5.1A 6TSOP

SI3460DV-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 20V 5.1A 6TSOP. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case SOT-23-6 Thin, TSOT-23-6.

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In Stock: 5,774

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	5.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	27mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id	450mV @ 1mA (Min)
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 4.5 V

Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	-
FET Feature	-
Power Dissipation (Max)	1.1W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-TSOP
Package / Case	SOT-23-6 Thin, TSOT-23-6