SI3434DV-T1-E3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single
REF: SI3434DV-T1-E3 Vishay Siliconix
SI3434DV-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 4.6A 6TSOP

SI3434DV-T1-E3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 30V 4.6A 6TSOP. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case SOT-23-6 Thin, TSOT-23-6.

In Stock: 4,015

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C4.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs34mOhm @ 6.1A, 4.5V
Vgs(th) (Max) @ Id600mV @ 1mA (Min)
Gate Charge (Qg) (Max) @ Vgs12 nC @ 4.5 V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)1.14W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-TSOP
Package / CaseSOT-23-6 Thin, TSOT-23-6

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