SI3407DV-T1-BE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single
REF: SI3407DV-T1-BE3 Vishay Siliconix
SI3407DV-T1-BE3

Vishay Siliconix

MOSFET P-CH 20V 7.5A/8A 6TSOP

SI3407DV-T1-BE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 20V 7.5A/8A 6TSOP. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case SOT-23-6 Thin, TSOT-23-6.

In Stock: 6,358

Specifications

17 parameters
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C7.5A (Ta), 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs24mOhm @ 7.5A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs63 nC @ 10 V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds1670 pF @ 10 V
FET Feature-
Power Dissipation (Max)2W (Ta), 4.2W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-TSOP
Package / CaseSOT-23-6 Thin, TSOT-23-6

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