Name: SI3129DV-T1-GE3
Brand: Vishay Siliconix
SKU: SI3129DV-T1-GE3
Price: 0.71 USD
Availability: InStock

REF: SI3129DV-T1-GE3 Vishay Siliconix

SI3129DV-T1-GE3

Vishay Siliconix

P-CHANNEL 80 V (D-S) MOSFET TSOP

SI3129DV-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. P-CHANNEL 80 V (D-S) MOSFET TSOP. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case SOT-23-6 Thin, TSOT-23-6.

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In Stock: 7,900

Specifications

17 parameters

Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	3.8A (Ta), 5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	82.7mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	18 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	805 pF @ 40 V
FET Feature	-
Power Dissipation (Max)	2W (Ta), 4.2W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-TSOP
Package / Case	SOT-23-6 Thin, TSOT-23-6