Name: SI2369BDS-T1-GE3
Brand: Vishay Siliconix
SKU: SI2369BDS-T1-GE3
Price: 0.56 USD
Availability: InStock

REF: SI2369BDS-T1-GE3 Vishay Siliconix

SI2369BDS-T1-GE3

Vishay Siliconix

MOSFET P-CH 30V 5.6A/7.5A SOT23

SI2369BDS-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 30V 5.6A/7.5A SOT23. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-236-3, SC-59, SOT-23-3.

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In Stock: 8,138

Specifications

17 parameters

Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	5.6A (Ta), 7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	27mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	19.5 nC @ 10 V

Vgs (Max)	+16V, -20V
Input Capacitance (Ciss) (Max) @ Vds	745 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	1.3W (Ta), 2.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3