SI2342DS-T1-BE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single
REF: SI2342DS-T1-BE3 Vishay Siliconix
SI2342DS-T1-BE3

Vishay Siliconix

N-CHANNEL 8-V (D-S) MOSFET

SI2342DS-T1-BE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. N-CHANNEL 8-V (D-S) MOSFET. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-236-3, SC-59, SOT-23-3.

In Stock: 9,927

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)8 V
Current - Continuous Drain (Id) @ 25°C6A (Ta), 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.2V, 4.5V
Rds On (Max) @ Id, Vgs17mOhm @ 7.2A, 4.5V
Vgs(th) (Max) @ Id800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs15.8 nC @ 4.5 V
Vgs (Max)±5V
Input Capacitance (Ciss) (Max) @ Vds1070 pF @ 4 V
FET Feature-
Power Dissipation (Max)1.3W (Ta), 2.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3 (TO-236)
Package / CaseTO-236-3, SC-59, SOT-23-3

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