Name: SI2309DS-T1-E3
Brand: Vishay Siliconix
SKU: SI2309DS-T1-E3
Availability: InStock

REF: SI2309DS-T1-E3 Vishay Siliconix

SI2309DS-T1-E3

MOSFET P-CH 60V 1.25A SOT23-3

SI2309DS-T1-E3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 60V 1.25A SOT23-3. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-236-3, SC-59, SOT-23-3.

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In Stock: 6,711

Specifications

17 parameters

Product Status	Obsolete
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	1.25A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	340mOhm @ 1.25A, 10V
Vgs(th) (Max) @ Id	1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	-
FET Feature	-
Power Dissipation (Max)	1.25W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3