SI2305DS-T1-E3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single
REF: SI2305DS-T1-E3 Vishay Siliconix
SI2305DS-T1-E3

Vishay Siliconix

MOSFET P-CH 8V 3.5A SOT23-3

SI2305DS-T1-E3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 8V 3.5A SOT23-3. Key specifications: mounting type Surface Mount, package / case TO-236-3, SC-59, SOT-23-3.

In Stock: 2,066

Specifications

17 parameters
Product StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)8 V
Current - Continuous Drain (Id) @ 25°C3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs52mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs15 nC @ 4.5 V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds1245 pF @ 4 V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3 (TO-236)
Package / CaseTO-236-3, SC-59, SOT-23-3

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