SI1958DH-T1-E3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Arrays
REF: SI1958DH-T1-E3 Vishay Siliconix
SI1958DH-T1-E3

Vishay Siliconix

MOSFET 2N-CH 20V 1.3A SC70-6

SI1958DH-T1-E3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET 2N-CH 20V 1.3A SC70-6. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 6-TSSOP, SC-88, SOT-363, power - max 1.25W.

In Stock: 4,830

Specifications

14 parameters
Product StatusObsolete
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C1.3A
Rds On (Max) @ Id, Vgs205mOhm @ 1.3A, 4.5V
Vgs(th) (Max) @ Id1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs3.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds105pF @ 10V
Power - Max1.25W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-70-6

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