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SI1922EDH-T1-GE3

In Stock: 2,013
SI1922EDH-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Arrays
REF: SI1922EDH-T1-GE3 Vishay Siliconix
SI1922EDH-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 20V 1.3A SOT-363

SI1922EDH-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET 2N-CH 20V 1.3A SOT-363. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 6-TSSOP, SC-88, SOT-363, power - max 1.25W.

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In Stock: 2,013

Specifications

14 parameters
Product StatusActive
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C1.3A
Rds On (Max) @ Id, Vgs198mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs2.5nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max1.25W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-70-6

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