Name: SI1417EDH-T1-GE3
Brand: Vishay Siliconix
SKU: SI1417EDH-T1-GE3
Availability: InStock

REF: SI1417EDH-T1-GE3 Vishay Siliconix

SI1417EDH-T1-GE3

MOSFET P-CH 12V 2.7A SC70-6

SI1417EDH-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 12V 2.7A SC70-6. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 6-TSSOP, SC-88, SOT-363.

Datasheet Request a Quote

In Stock: 8,798

Specifications

17 parameters

Product Status	Obsolete
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12 V
Current - Continuous Drain (Id) @ 25°C	2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	85mOhm @ 3.3A, 4.5V
Vgs(th) (Max) @ Id	450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs	8 nC @ 4.5 V

Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	-
FET Feature	-
Power Dissipation (Max)	1W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SC-70-6
Package / Case	6-TSSOP, SC-88, SOT-363