SI1414DH-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single
REF: SI1414DH-T1-GE3 Vishay Siliconix
SI1414DH-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 4A SOT-363

SI1414DH-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 30V 4A SOT-363. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 6-TSSOP, SC-88, SOT-363.

In Stock: 9,994

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs46mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15 nC @ 8 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds560 pF @ 15 V
FET Feature-
Power Dissipation (Max)2.8W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-70-6
Package / Case6-TSSOP, SC-88, SOT-363

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