SI1315DL-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single
REF: SI1315DL-T1-GE3 Vishay Siliconix
SI1315DL-T1-GE3

Vishay Siliconix

MOSFET P-CH 8V 900MA SOT323

SI1315DL-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 8V 900MA SOT323. Key specifications: mounting type Surface Mount, operating temperature -50°C ~ 150°C (TJ), package / case SC-70, SOT-323.

In Stock: 3,411

Specifications

17 parameters
Product StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)8 V
Current - Continuous Drain (Id) @ 25°C900mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs336mOhm @ 800mA, 4.5V
Vgs(th) (Max) @ Id800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs3.4 nC @ 4.5 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds112 pF @ 4 V
FET Feature-
Power Dissipation (Max)300mW (Ta), 400mW (Tc)
Operating Temperature-50°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-70-3
Package / CaseSC-70, SOT-323

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