SI1077X-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single
REF: SI1077X-T1-GE3 Vishay Siliconix
SI1077X-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V SC89-6

SI1077X-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 20V SC89-6. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case SOT-563, SOT-666.

In Stock: 7,909

Specifications

17 parameters
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C1.75A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Rds On (Max) @ Id, Vgs78mOhm @ 1.8A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs31.1 nC @ 8 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds965 pF @ 10 V
FET Feature-
Power Dissipation (Max)330mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-89 (SOT-563F)
Package / CaseSOT-563, SOT-666

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