SI1062X-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single
REF: SI1062X-T1-GE3 Vishay Siliconix
SI1062X-T1-GE3

Vishay Siliconix

MOSFET N-CH 20V SC89-3

SI1062X-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 20V SC89-3. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case SC-89, SOT-490.

In Stock: 6,766

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C530mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Rds On (Max) @ Id, Vgs420mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs2.7 nC @ 8 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds43 pF @ 10 V
FET Feature-
Power Dissipation (Max)220mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-89-3
Package / CaseSC-89, SOT-490

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