SI1026X-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Arrays
REF: SI1026X-T1-GE3 Vishay Siliconix
SI1026X-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 60V 0.305A SC89-6

SI1026X-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET 2N-CH 60V 0.305A SC89-6. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case SOT-563, SOT-666, power - max 250mW.

In Stock: 4,439

Specifications

14 parameters
Product StatusActive
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C305mA
Rds On (Max) @ Id, Vgs1.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds30pF @ 25V
Power - Max250mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageSC-89 (SOT-563F)

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