SI1013R-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single
REF: SI1013R-T1-GE3 Vishay Siliconix
SI1013R-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 350MA SC75A

SI1013R-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 20V 350MA SC75A. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case SC-75, SOT-416.

In Stock: 89,811

Specifications

17 parameters
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs1.2Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs1.5 nC @ 4.5 V
Vgs (Max)±6V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)150mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-75A
Package / CaseSC-75, SOT-416

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