Name: SI1011X-T1-GE3
Brand: Vishay Siliconix
SKU: SI1011X-T1-GE3
Availability: InStock

REF: SI1011X-T1-GE3 Vishay Siliconix

SI1011X-T1-GE3

MOSFET P-CH 12V SC89-3

SI1011X-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 12V SC89-3. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case SC-89, SOT-490.

Datasheet Request a Quote

In Stock: 1,352

Specifications

17 parameters

Product Status	Obsolete
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12 V
Current - Continuous Drain (Id) @ 25°C	480mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Rds On (Max) @ Id, Vgs	640mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id	800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	4 nC @ 4.5 V

Vgs (Max)	±5V
Input Capacitance (Ciss) (Max) @ Vds	62 pF @ 6 V
FET Feature	-
Power Dissipation (Max)	190mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SC-89-3
Package / Case	SC-89, SOT-490