Name: SI1002R-T1-GE3
Brand: Vishay Siliconix
SKU: SI1002R-T1-GE3
Availability: InStock

REF: SI1002R-T1-GE3 Vishay Siliconix

SI1002R-T1-GE3

MOSFET N-CH 30V 610MA SC75A

SI1002R-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 30V 610MA SC75A. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case SC-75A.

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In Stock: 1,718

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	610mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	560mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	2 nC @ 8 V

Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	36 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	220mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SC-75A
Package / Case	SC-75A