IRLD120PBF - Vishay Siliconix - Transistors - FETs, MOSFETs - Single
REF: IRLD120PBF Vishay Siliconix
IRLD120PBF

Vishay Siliconix

MOSFET N-CH 100V 1.3A 4DIP

IRLD120PBF is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 100V 1.3A 4DIP. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case 4-DIP (0.300", 7.62mm).

In Stock: 7,553

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 5V
Rds On (Max) @ Id, Vgs270mOhm @ 780mA, 5V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12 nC @ 5 V
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds490 pF @ 25 V
FET Feature-
Power Dissipation (Max)1.3W (Ta)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device Package4-HVMDIP
Package / Case4-DIP (0.300", 7.62mm)

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