Name: IRLD110
Brand: Vishay Siliconix
SKU: IRLD110
Availability: InStock

REF: IRLD110 Vishay Siliconix

IRLD110

MOSFET N-CH 100V 1A 4DIP

IRLD110 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 100V 1A 4DIP. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case 4-DIP (0.300", 7.62mm).

Datasheet Request a Quote

In Stock: 7,759

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4V, 5V
Rds On (Max) @ Id, Vgs	540mOhm @ 600mA, 5V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	6.1 nC @ 5 V

Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	250 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	1.3W (Ta)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	4-HVMDIP
Package / Case	4-DIP (0.300", 7.62mm)