IRFIBF20G - Vishay Siliconix - Transistors - FETs, MOSFETs - Single
REF: IRFIBF20G Vishay Siliconix
IRFIBF20G

Vishay Siliconix

MOSFET N-CH 900V 1.2A TO220-3

IRFIBF20G is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 900V 1.2A TO220-3. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3 Full Pack, Isolated Tab.

In Stock: 4,865

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)900 V
Current - Continuous Drain (Id) @ 25°C1.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs8Ohm @ 720mA, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs38 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds490 pF @ 25 V
FET Feature-
Power Dissipation (Max)30W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3 Full Pack, Isolated Tab

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