Name: IRFIB8N50K
Brand: Vishay Siliconix
SKU: IRFIB8N50K
Availability: InStock

REF: IRFIB8N50K Vishay Siliconix

IRFIB8N50K

MOSFET N-CH 500V 6.7A TO220-3

IRFIB8N50K is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 500V 6.7A TO220-3. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3 Full Pack, Isolated Tab.

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In Stock: 9,885

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V
Current - Continuous Drain (Id) @ 25°C	6.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	350mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	89 nC @ 10 V

Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2160 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	45W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3 Full Pack, Isolated Tab