Name: IRFD224PBF
Brand: Vishay Siliconix
SKU: IRFD224PBF
Price: 1.56 USD
Availability: InStock

REF: IRFD224PBF Vishay Siliconix

IRFD224PBF

MOSFET N-CH 250V 630MA 4DIP

IRFD224PBF is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 250V 630MA 4DIP. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case 4-DIP (0.300", 7.62mm).

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In Stock: 8,954

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	250 V
Current - Continuous Drain (Id) @ 25°C	630mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.1Ohm @ 380mA, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	14 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	260 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	1W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	4-HVMDIP
Package / Case	4-DIP (0.300", 7.62mm)