Name: IRFD123PBF
Brand: Vishay Siliconix
SKU: IRFD123PBF
Price: 1.45 USD
Availability: InStock

REF: IRFD123PBF Vishay Siliconix

IRFD123PBF

MOSFET N-CH 100V 1.3A 4DIP

IRFD123PBF is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET N-CH 100V 1.3A 4DIP. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case 4-DIP (0.300", 7.62mm).

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In Stock: 5,000

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	270mOhm @ 780mA, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	16 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	360 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	1.3W (Ta)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	4-HVMDIP
Package / Case	4-DIP (0.300", 7.62mm)