3N163-E3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single
REF: 3N163-E3 Vishay Siliconix
3N163-E3

Vishay Siliconix

MOSFET P-CH 40V 50MA TO72

3N163-E3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 40V 50MA TO72. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-206AF, TO-72-4 Metal Can.

In Stock: 9,146

Specifications

17 parameters
Product StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C50mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs250Ohm @ 100µA, 20V
Vgs(th) (Max) @ Id5V @ 10µA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3.5 pF @ 15 V
FET Feature-
Power Dissipation (Max)375mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-72
Package / CaseTO-206AF, TO-72-4 Metal Can

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