Name: VS-GT50TP60N
Brand: Vishay General Semiconductor - Diodes Division
SKU: VS-GT50TP60N
Availability: InStock

REF: VS-GT50TP60N Vishay General Semiconductor - Diodes Division

VS-GT50TP60N

Vishay General Semiconductor - Diodes Division

IGBT MOD 600V 85A 208W INT-A-PAK

VS-GT50TP60N is a Transistors - IGBTs - Modules manufactured by Vishay General Semiconductor - Diodes Division. IGBT MOD 600V 85A 208W INT-A-PAK. Key specifications: mounting type Chassis Mount, operating temperature 175°C (TJ), package / case INT-A-PAK (3 + 4), current - collector (ic) (max) 85 A.

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In Stock: 5,446

Specifications

15 parameters

Product Status	Obsolete
IGBT Type	Trench
Configuration	Half Bridge
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	85 A
Power - Max	208 W
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 50A
Current - Collector Cutoff (Max)	1 mA

Input Capacitance (Cies) @ Vce	3.03 nF @ 30 V
Input	Standard
NTC Thermistor	No
Operating Temperature	175°C (TJ)
Mounting Type	Chassis Mount
Package / Case	INT-A-PAK (3 + 4)
Supplier Device Package	INT-A-PAK