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VS-GT200TP065N

In Stock: 5,745
VS-GT200TP065N - Vishay General Semiconductor - Diodes Division - Transistors - IGBTs - Modules
REF: VS-GT200TP065N Vishay General Semiconductor - Diodes Division
VS-GT200TP065N

Vishay General Semiconductor - Diodes Division

IGBT MOD 650V 221A INT-A-PAK

VS-GT200TP065N is a Transistors - IGBTs - Modules manufactured by Vishay General Semiconductor - Diodes Division. IGBT MOD 650V 221A INT-A-PAK. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 175°C (TJ), package / case INT-A-Pak, current - collector (ic) (max) 221 A.

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In Stock: 5,745

Specifications

15 parameters
Product StatusObsolete
IGBT TypeTrench
ConfigurationHalf Bridge
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)221 A
Power - Max600 W
Vce(on) (Max) @ Vge, Ic2.12V @ 15V, 200A
Current - Collector Cutoff (Max)60 µA
Input Capacitance (Cies) @ Vce-
InputStandard
NTC ThermistorNo
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeChassis Mount
Package / CaseINT-A-Pak
Supplier Device PackageINT-A-PAK

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