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VS-GT100DA120UF

In Stock: 120
VS-GT100DA120UF - Vishay General Semiconductor - Diodes Division - Transistors - IGBTs - Modules
REF: VS-GT100DA120UF Vishay General Semiconductor - Diodes Division
VS-GT100DA120UF

Vishay General Semiconductor - Diodes Division

IGBT MOD 1200V 187A 890W SOT227

VS-GT100DA120UF is a Transistors - IGBTs - Modules manufactured by Vishay General Semiconductor - Diodes Division. IGBT MOD 1200V 187A 890W SOT227. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 150°C (TJ), package / case SOT-227-4, miniBLOC, current - collector (ic) (max) 187 A.

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In Stock: 120

Specifications

15 parameters
Product StatusActive
IGBT TypeTrench
ConfigurationSingle
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)187 A
Power - Max890 W
Vce(on) (Max) @ Vge, Ic2.55V @ 15V, 100A
Current - Collector Cutoff (Max)100 µA
Input Capacitance (Cies) @ Vce6.15 nF @ 25 V
InputStandard
NTC ThermistorNo
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseSOT-227-4, miniBLOC
Supplier Device PackageSOT-227

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