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VS-GB75SA120UP

In Stock: 6,874
VS-GB75SA120UP - Vishay General Semiconductor - Diodes Division - Transistors - IGBTs - Modules
REF: VS-GB75SA120UP Vishay General Semiconductor - Diodes Division
VS-GB75SA120UP

Vishay General Semiconductor - Diodes Division

IGBT MODULE 1200V 658W SOT227

VS-GB75SA120UP is a Transistors - IGBTs - Modules manufactured by Vishay General Semiconductor - Diodes Division. IGBT MODULE 1200V 658W SOT227. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 150°C (TJ), package / case SOT-227-4, miniBLOC, power - max 658 W.

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In Stock: 6,874

Specifications

15 parameters
Product StatusObsolete
IGBT TypeNPT
ConfigurationSingle
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)-
Power - Max658 W
Vce(on) (Max) @ Vge, Ic3.8V @ 15V, 75A
Current - Collector Cutoff (Max)250 µA
Input Capacitance (Cies) @ Vce-
InputStandard
NTC ThermistorNo
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseSOT-227-4, miniBLOC
Supplier Device PackageSOT-227

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