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VS-GB75NA60UF

In Stock: 2,986
VS-GB75NA60UF - Vishay General Semiconductor - Diodes Division - Transistors - IGBTs - Modules
REF: VS-GB75NA60UF Vishay General Semiconductor - Diodes Division
VS-GB75NA60UF

Vishay General Semiconductor - Diodes Division

IGBT MOD 600V 109A 447W SOT227

VS-GB75NA60UF is a Transistors - IGBTs - Modules manufactured by Vishay General Semiconductor - Diodes Division. IGBT MOD 600V 109A 447W SOT227. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 150°C (TJ), package / case SOT-227-4, miniBLOC, current - collector (ic) (max) 109 A.

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In Stock: 2,986

Specifications

15 parameters
Product StatusObsolete
IGBT TypeNPT
ConfigurationSingle
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)109 A
Power - Max447 W
Vce(on) (Max) @ Vge, Ic2V @ 15V, 35A
Current - Collector Cutoff (Max)50 µA
Input Capacitance (Cies) @ Vce-
InputStandard
NTC ThermistorNo
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseSOT-227-4, miniBLOC
Supplier Device PackageSOT-227

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