Name: VS-GB50YF120N
Brand: Vishay General Semiconductor - Diodes Division
SKU: VS-GB50YF120N
Availability: InStock

REF: VS-GB50YF120N Vishay General Semiconductor - Diodes Division

VS-GB50YF120N

Vishay General Semiconductor - Diodes Division

IGBT MOD 1200V 66A ECONO2 4PACK

VS-GB50YF120N is a Transistors - IGBTs - Modules manufactured by Vishay General Semiconductor - Diodes Division. IGBT MOD 1200V 66A ECONO2 4PACK. Key specifications: mounting type Chassis Mount, operating temperature 150°C (TJ), package / case Module, current - collector (ic) (max) 66 A.

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In Stock: 1,533

Specifications

15 parameters

Product Status	Obsolete
IGBT Type	-
Configuration	-
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	66 A
Power - Max	330 W
Vce(on) (Max) @ Vge, Ic	4.5V @ 15V, 75A
Current - Collector Cutoff (Max)	250 µA

Input Capacitance (Cies) @ Vce	-
Input	Standard
NTC Thermistor	No
Operating Temperature	150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	ECONO2 4PACK