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VS-GB200TH120N

In Stock: 1,172
VS-GB200TH120N - Vishay General Semiconductor - Diodes Division - Transistors - IGBTs - Modules
REF: VS-GB200TH120N Vishay General Semiconductor - Diodes Division
VS-GB200TH120N

Vishay General Semiconductor - Diodes Division

IGBT MOD 1200V 360A INT-A-PAK

VS-GB200TH120N is a Transistors - IGBTs - Modules manufactured by Vishay General Semiconductor - Diodes Division. IGBT MOD 1200V 360A INT-A-PAK. Key specifications: mounting type Chassis Mount, operating temperature 150°C (TJ), package / case Double INT-A-PAK (3 + 4), current - collector (ic) (max) 360 A.

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In Stock: 1,172

Specifications

15 parameters
Product StatusObsolete
IGBT Type-
ConfigurationHalf Bridge
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)360 A
Power - Max1136 W
Vce(on) (Max) @ Vge, Ic2.35V @ 15V, 200A
Current - Collector Cutoff (Max)5 mA
Input Capacitance (Cies) @ Vce14.9 nF @ 25 V
InputStandard
NTC ThermistorNo
Operating Temperature150°C (TJ)
Mounting TypeChassis Mount
Package / CaseDouble INT-A-PAK (3 + 4)
Supplier Device PackageDouble INT-A-PAK

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