Name: VS-GB200LH120N
Brand: Vishay General Semiconductor - Diodes Division
SKU: VS-GB200LH120N
Availability: InStock

REF: VS-GB200LH120N Vishay General Semiconductor - Diodes Division

VS-GB200LH120N

Vishay General Semiconductor - Diodes Division

IGBT MOD 1200V 370A INT-A-PAK

VS-GB200LH120N is a Transistors - IGBTs - Modules manufactured by Vishay General Semiconductor - Diodes Division. IGBT MOD 1200V 370A INT-A-PAK. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 150°C (TJ), package / case Double INT-A-PAK (3 + 4), current - collector (ic) (max) 370 A.

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In Stock: 6,733

Specifications

15 parameters

Product Status	Obsolete
IGBT Type	-
Configuration	Single
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	370 A
Power - Max	1562 W
Vce(on) (Max) @ Vge, Ic	2.07V @ 15V, 200A (Typ)
Current - Collector Cutoff (Max)	100 nA

Input Capacitance (Cies) @ Vce	18 nF @ 25 V
Input	Standard
NTC Thermistor	No
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Double INT-A-PAK (3 + 4)
Supplier Device Package	Double INT-A-PAK