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VS-GB100TP120N

In Stock: 5,112
VS-GB100TP120N - Vishay General Semiconductor - Diodes Division - Transistors - IGBTs - Modules
REF: VS-GB100TP120N Vishay General Semiconductor - Diodes Division
VS-GB100TP120N

Vishay General Semiconductor - Diodes Division

IGBT MOD 1200V 200A INT-A-PAK

VS-GB100TP120N is a Transistors - IGBTs - Modules manufactured by Vishay General Semiconductor - Diodes Division. IGBT MOD 1200V 200A INT-A-PAK. Key specifications: mounting type Chassis Mount, operating temperature 150°C (TJ), package / case INT-A-Pak, current - collector (ic) (max) 200 A.

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In Stock: 5,112

Specifications

15 parameters
Product StatusObsolete
IGBT Type-
ConfigurationHalf Bridge
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)200 A
Power - Max650 W
Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 100A
Current - Collector Cutoff (Max)5 mA
Input Capacitance (Cies) @ Vce7.43 nF @ 25 V
InputStandard
NTC ThermistorNo
Operating Temperature150°C (TJ)
Mounting TypeChassis Mount
Package / CaseINT-A-Pak
Supplier Device PackageINT-A-PAK

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