Name: VS-GB100TH120U
Brand: Vishay General Semiconductor - Diodes Division
SKU: VS-GB100TH120U
Availability: InStock

REF: VS-GB100TH120U Vishay General Semiconductor - Diodes Division

VS-GB100TH120U

Vishay General Semiconductor - Diodes Division

IGBT MOD 1200V 200A INT-A-PAK

VS-GB100TH120U is a Transistors - IGBTs - Modules manufactured by Vishay General Semiconductor - Diodes Division. IGBT MOD 1200V 200A INT-A-PAK. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 150°C (TJ), package / case Double INT-A-PAK (3 + 4), current - collector (ic) (max) 200 A.

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In Stock: 4,196

Specifications

15 parameters

Product Status	Obsolete
IGBT Type	NPT
Configuration	Half Bridge
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	200 A
Power - Max	1136 W
Vce(on) (Max) @ Vge, Ic	3.6V @ 15V, 100A
Current - Collector Cutoff (Max)	5 mA

Input Capacitance (Cies) @ Vce	8.45 nF @ 20 V
Input	Standard
NTC Thermistor	No
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Double INT-A-PAK (3 + 4)
Supplier Device Package	Double INT-A-PAK