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VS-GB100LP120N

In Stock: 7,487
VS-GB100LP120N - Vishay General Semiconductor - Diodes Division - Transistors - IGBTs - Modules
REF: VS-GB100LP120N Vishay General Semiconductor - Diodes Division
VS-GB100LP120N

Vishay General Semiconductor - Diodes Division

IGBT MOD 1200V 200A INT-A-PAK

VS-GB100LP120N is a Transistors - IGBTs - Modules manufactured by Vishay General Semiconductor - Diodes Division. IGBT MOD 1200V 200A INT-A-PAK. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 150°C (TJ), package / case INT-A-Pak, current - collector (ic) (max) 200 A.

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In Stock: 7,487

Specifications

15 parameters
Product StatusObsolete
IGBT Type-
ConfigurationSingle
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)200 A
Power - Max658 W
Vce(on) (Max) @ Vge, Ic1.8V @ 15V, 100A (Typ)
Current - Collector Cutoff (Max)1 mA
Input Capacitance (Cies) @ Vce7.43 nF @ 25 V
InputStandard
NTC ThermistorNo
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseINT-A-Pak
Supplier Device PackageINT-A-PAK

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