VS-GA200TH60S - Vishay General Semiconductor - Diodes Division - Transistors - IGBTs - Modules
REF: VS-GA200TH60S Vishay General Semiconductor - Diodes Division
VS-GA200TH60S

Vishay General Semiconductor - Diodes Division

IGBT MOD 600V 260A INT-A-PAK

VS-GA200TH60S is a Transistors - IGBTs - Modules manufactured by Vishay General Semiconductor - Diodes Division. IGBT MOD 600V 260A INT-A-PAK. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 150°C (TJ), package / case Double INT-A-PAK (3 + 4), current - collector (ic) (max) 260 A.

In Stock: 4,318

Specifications

15 parameters
Product StatusObsolete
IGBT Type-
ConfigurationHalf Bridge
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)260 A
Power - Max1042 W
Vce(on) (Max) @ Vge, Ic1.9V @ 15V, 200A (Typ)
Current - Collector Cutoff (Max)5 µA
Input Capacitance (Cies) @ Vce13.1 nF @ 25 V
InputStandard
NTC ThermistorNo
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseDouble INT-A-PAK (3 + 4)
Supplier Device PackageDouble INT-A-PAK

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