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VS-ETH3007T-N3

In Stock: 7,855
VS-ETH3007T-N3 - Vishay General Semiconductor - Diodes Division - Diodes - Rectifiers - Single
REF: VS-ETH3007T-N3 Vishay General Semiconductor - Diodes Division
VS-ETH3007T-N3

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 650V 30A TO220AC

VS-ETH3007T-N3 is a Diodes - Rectifiers - Single manufactured by Vishay General Semiconductor - Diodes Division. DIODE GEN PURP 650V 30A TO220AC. Key specifications: mounting type Through Hole, package / case TO-220-2.

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In Stock: 7,855

Specifications

13 parameters
Product StatusObsolete
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)650 V
Current - Average Rectified (Io)30A
Voltage - Forward (Vf) (Max) @ If2.1 V @ 30 A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)37 ns
Current - Reverse Leakage @ Vr30 µA @ 650 V
Capacitance @ Vr, F-
Mounting TypeThrough Hole
Package / CaseTO-220-2
Supplier Device PackageTO-220AC
Operating Temperature - Junction-55°C ~ 175°C

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