VS-ETF150Y65N - Vishay General Semiconductor - Diodes Division - Transistors - IGBTs - Modules
REF: VS-ETF150Y65N Vishay General Semiconductor - Diodes Division
VS-ETF150Y65N

Vishay General Semiconductor - Diodes Division

IGBT MOD 650V 201A 600W

VS-ETF150Y65N is a Transistors - IGBTs - Modules manufactured by Vishay General Semiconductor - Diodes Division. IGBT MOD 650V 201A 600W. Key specifications: operating temperature 175°C (TJ), package / case Module, current - collector (ic) (max) 201 A, power - max 600 W.

In Stock: 8

Specifications

15 parameters
Product StatusObsolete
IGBT TypeNPT
ConfigurationHalf Bridge Inverter
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)201 A
Power - Max600 W
Vce(on) (Max) @ Vge, Ic2.17V @ 15V, 150A
Current - Collector Cutoff (Max)-
Input Capacitance (Cies) @ Vce-
InputStandard
NTC ThermistorYes
Operating Temperature175°C (TJ)
Mounting Type-
Package / CaseModule
Supplier Device PackageModule

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