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VS-EMG050J60N

In Stock: 4,106
VS-EMG050J60N - Vishay General Semiconductor - Diodes Division - Transistors - IGBTs - Modules
REF: VS-EMG050J60N Vishay General Semiconductor - Diodes Division
VS-EMG050J60N

Vishay General Semiconductor - Diodes Division

IGBT MOD 600V 88A 338W EMIPAK2

VS-EMG050J60N is a Transistors - IGBTs - Modules manufactured by Vishay General Semiconductor - Diodes Division. IGBT MOD 600V 88A 338W EMIPAK2. Key specifications: mounting type Chassis Mount, operating temperature 150°C (TJ), package / case EMIPAK2, current - collector (ic) (max) 88 A.

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In Stock: 4,106

Specifications

15 parameters
Product StatusObsolete
IGBT Type-
ConfigurationHalf Bridge
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)88 A
Power - Max338 W
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 50A
Current - Collector Cutoff (Max)100 µA
Input Capacitance (Cies) @ Vce9.5 nF @ 30 V
InputStandard
NTC ThermistorYes
Operating Temperature150°C (TJ)
Mounting TypeChassis Mount
Package / CaseEMIPAK2
Supplier Device PackageEMIPAK2

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