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VS-4ESH02-M3/86A

In Stock: 4,567
VS-4ESH02-M3/86A - Vishay General Semiconductor - Diodes Division - Diodes - Rectifiers - Single
REF: VS-4ESH02-M3/86A Vishay General Semiconductor - Diodes Division
VS-4ESH02-M3/86A

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 200V 4A TO277A

VS-4ESH02-M3/86A is a Diodes - Rectifiers - Single manufactured by Vishay General Semiconductor - Diodes Division. DIODE GEN PURP 200V 4A TO277A. Key specifications: mounting type Surface Mount, package / case TO-277, 3-PowerDFN.

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In Stock: 4,567

Specifications

13 parameters
Product StatusActive
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)200 V
Current - Average Rectified (Io)4A
Voltage - Forward (Vf) (Max) @ If930 mV @ 4 A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)20 ns
Current - Reverse Leakage @ Vr2 µA @ 200 V
Capacitance @ Vr, F-
Mounting TypeSurface Mount
Package / CaseTO-277, 3-PowerDFN
Supplier Device PackageTO-277A (SMPC)
Operating Temperature - Junction-65°C ~ 175°C

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