Name: NSB8MTHE3_B/I
Brand: Vishay General Semiconductor - Diodes Division
SKU: NSB8MTHE3_B/I
Price: 0.69 USD
Availability: InStock

REF: NSB8MTHE3_B/I Vishay General Semiconductor - Diodes Division

NSB8MTHE3_B/I

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1KV 8A TO263AB

NSB8MTHE3_B/I is a Diodes - Rectifiers - Single manufactured by Vishay General Semiconductor - Diodes Division. DIODE GEN PURP 1KV 8A TO263AB. Key specifications: mounting type Surface Mount, package / case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

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In Stock: 3,953

Specifications

13 parameters

Product Status	Active
Diode Type	Standard
Voltage - DC Reverse (Vr) (Max)	1000 V
Current - Average Rectified (Io)	8A
Voltage - Forward (Vf) (Max) @ If	1.1 V @ 8 A
Speed	Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)	-

Current - Reverse Leakage @ Vr	10 µA @ 1000 V
Capacitance @ Vr, F	55pF @ 4V, 1MHz
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	TO-263AB (D²PAK)
Operating Temperature - Junction	-55°C ~ 150°C