GB35XF120K - Vishay General Semiconductor - Diodes Division - Transistors - IGBTs - Modules
REF: GB35XF120K Vishay General Semiconductor - Diodes Division
GB35XF120K

Vishay General Semiconductor - Diodes Division

IGBT MODULE 1200V 50A 284W

GB35XF120K is a Transistors - IGBTs - Modules manufactured by Vishay General Semiconductor - Diodes Division. IGBT MODULE 1200V 50A 284W. Key specifications: mounting type Chassis Mount, operating temperature 150°C (TJ), package / case ECONO2, current - collector (ic) (max) 50 A.

In Stock: 7,234

Specifications

15 parameters
Product StatusObsolete
IGBT TypeNPT
ConfigurationThree Phase Inverter
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)50 A
Power - Max284 W
Vce(on) (Max) @ Vge, Ic3V @ 15V, 50A
Current - Collector Cutoff (Max)100 µA
Input Capacitance (Cies) @ Vce3.475 nF @ 30 V
InputStandard
NTC ThermistorNo
Operating Temperature150°C (TJ)
Mounting TypeChassis Mount
Package / CaseECONO2
Supplier Device Package-

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